Fundamentals of Electronic Devices and Circuits syllabus regulation 2021 of Anna University B.E Medical Electronics. In this article, we would like to provide the semester III of the B.E Medical Electronics Engineering Syllabus.
We would like to discuss the detailed syllabus of the Subject code BM3353 – Fundamentals of Electronic Devices and Circuits. You can easily note down and take notes according to the syllabus. We add a unit-wise syllabus to this page. Along with that, we included the required textbooks and references from the expert faculty. You can also prepare for exams with a clear picture of the syllabus. The following unit-wise syllabus will assist you well. I hope this information is useful. Never forget to share it with your friends.
If you want to know more about the B.E Medical Electronics Engineering syllabus connected to an affiliated institution’s four-year undergraduate degree program. We provide you with a detailed Year-wise, semester-wise, and Subject-wise syllabus in the following link B.E Medical Electronics Engineering Syllabus Regulation 2021 Anna University.
Aim Of Objectives:
The objective of this unit is to make the student learn and understand
- Introduce the concept of diodes, Bipolar Junction Transistors and FET.
- Study the various model parameters of Transistors.
- Learn the concept of special semiconductor devices, Power & Display devices.
- Impart the knowledge of various configurations, characteristics, applications.
- To have knowledge of display and power devices.
BM3353 – Fundamentals of Electronic Devices and Circuits Syllabus
Unit – I: Semiconductor Diode
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.
Unit – II: Bipolar Junction Transistors
NPN – PNP – Operations – Early effect – Current equations – Input and Output characteristics of CE, CB, CC – Hybrid – π model – h-parameter model, Ebers Moll Model – Gummel Poon – model, Multi Emitter Transistor.
Unit – III: Field Effect Transistors
MOSFETs – Drain and Transfer characteristics,- Current equations – Pinch off voltage and its significance- Threshold voltage – Channel length modulation, small signal Characteristics, D MOSFET, E-MOSFET – Characteristics – Comparison of MOSFET with BJT.
Unit – IV: Special Semiconductor Devices
Metal-Semiconductor Junction – MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Point Contact Diode, p-i-n Diode, Avalanche Photodiode, Schottky barrier diode – Zener diode Varactor diode – Tunnel diode – Gallium Arsenide device, LASER diode, LDR.
Unit – V: Power Devices And Display Devices
UJT, Thyristor – SCR, Diac, Triac, Power BJT – Power MOSFET – DMOS -VMOS. LED, LCD, Opto Coupler, Solar cell, CCD.
Text Books:
- Millman and Halkias, “Electronic Devices and Circuits”, 4th Edition, McGraw Hill, 2015.
- Mohammad Rashid, “Electronic Devices and Circuits”, Cengage Learning Pvt. Ltd, 2015.
- Salivahanan. S, Suresh Kumar. N, “Electronic Devices and circuits”, 4th Edition, McGraw Hill, 2016.
References:
- Robert L. Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory” Pearson Prentice Hall, 11th Edition, 2014.
- Bhattacharya and Sharma, “Solid State Electronic Devices”, 2nd Edition, Oxford University Press, 2014.
- R.S.Sedha, “A Textbook of Electronic Devices and Circuits”, 2nd Edition, S.Chand Publications, 2008.
- David A. Bell, “Electronic Devices and Circuits”, 5th Edition, Oxford University Press, 2008.
Related Posts On Semester – III:
- MA3351 Transforms and Partial Differential Equations
- EC3354 Signals and Systems
- BM3352 Electric Circuit Analysis
- CS3391 Object-Oriented Programming
Also Check: